Antireflection structures for visible and infrared wavelengths fabricated on silicon substrates by fast atom beam etching

Yoshiaki Kanamori; Minoru Sasaki; Kazuhiro Hane

doi:10.1117/12.347723

7 May 1999 Antireflection structures for visible and infrared wavelengths fabricated on silicon substrates by fast atom beam etching

Yoshiaki Kanamori, Minoru Sasaki, Kazuhiro Hane

Author Affiliations +

Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999) https://doi.org/10.1117/12.347723
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan

Abstract

Subwavelength structured (SWS) surface directly patterned on a substrate performs as antireflection surface. We fabricated the two-dimensional SWS surfaces on crystal silicon substrates and tested the reflection properties for visible and infrared wavelengths. The SWS surfaces were patterned by electron beam lithography and etched by SF₆ fast atom beam (FAB). In this work, the FAB process was first applied to fabricate the SWS surface. We fabricated the hole type SWS surface and the column type SWS surface. In both types, the grating period was 200 nm and the grooves were approximately 275 nm deep. The dependence of the reflectivity on the free-space wavelength between 200 nm and 2500 nm was examined. In addition, dependence of the reflectivity on the incident angle was examined with He-Ne laser light. From those experimental results, it was shown that the fabricated SWS surfaces, especially column type SWS surface, prevented the reflection in the wide ranges of wavelength (200 nm less than (lambda) ₀ less than 2500 nm) and incident angle (5 degrees less than (theta) less than 60 degrees).

Citation Download Citation

Yoshiaki Kanamori, Minoru Sasaki, and Kazuhiro Hane "Antireflection structures for visible and infrared wavelengths fabricated on silicon substrates by fast atom beam etching", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); https://doi.org/10.1117/12.347723

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