Master masks for big patterns by electron-beam lithography

Vladimir A. Zlobin; V. I. Mamonov; Olga G. Vasiljeva

doi:10.1117/12.209181

19 May 1995 Master masks for big patterns by electron-beam lithography

Vladimir A. Zlobin, V. I. Mamonov, Olga G. Vasiljeva

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209181
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Modern technologies for power semiconductor devices, laser and micro optics, micromechanics requires microlithography of patterns having a large are up to 100 cm² with complicate precise drawing. The electron beam lithography (EBL) tools with variable shape beam have good prospects for this purpose, but their application has a few problems in case of the tasks pointed above. The main problems are a great volume of information and a large exposure time of such patterns. We propose the system for preparation of the exposure data having more than 100 MB volume that consists from set of personal computers, network adapters, and software. The preparation of graphic information and exposure strategy are presented. The optimum exposure conditions are determined by program modeling the exposure process in dependence on the statistic distribution of sizes of EBL figures. Our method permits to decrease the exposure time in several times under certain conditions and brings that nearer to theoretical limit T_min equals SD/I_Bmax, where T_min is minimum exposure time, S is exposure area, D is dose density, I_Bmax is maximum beam current. This approach is valid if the basic factor limiting the writing speed is I_Bmax. The developed computer system and writing strategy was applied us for mask making on modified ZBA-21 tool. These masks were meant for production of power semiconductor and laser optics devices.

Citation Download Citation

Vladimir A. Zlobin, V. I. Mamonov, and Olga G. Vasiljeva "Master masks for big patterns by electron-beam lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209181

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