Paper
23 November 1999 High-power source and illumination system for extreme ultraviolet lithography
Glenn D. Kubiak, Luis J. Bernardez II, Kevin D. Krenz, William C. Replogle, William C. Sweatt, Donald W. Sweeney, Russell M. Hudyma, Harry Shields
Author Affiliations +
Abstract
A clean, high-power Extreme Ultraviolet (EUV) light source is being developed for Extreme Ultraviolet Lithography (EUVL). The source is based on a continuous jet of condensable gas irradiated with a diode-pumped solid state laser producing a time-averaged output power of 1700 W at 5000 - 6000 Hz. An illumination system is being assembled to collect and deliver the EUV output from the source and deliver it to a reticle and projection optics box to achieve an EUV exposure rate equivalent to ten 300-mm wafers per hour.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn D. Kubiak, Luis J. Bernardez II, Kevin D. Krenz, William C. Replogle, William C. Sweatt, Donald W. Sweeney, Russell M. Hudyma, and Harry Shields "High-power source and illumination system for extreme ultraviolet lithography", Proc. SPIE 3767, EUV, X-Ray, and Neutron Optics and Sources, (23 November 1999); https://doi.org/10.1117/12.371111
Lens.org Logo
CITATIONS
Cited by 9 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet

Plasma

Extreme ultraviolet lithography

Xenon

Mirrors

Reticles

Chlorine

RELATED CONTENT

Initial results from the EUV engineering test stand
Proceedings of SPIE (December 20 2001)
Small field exposure tool (SFET) light source
Proceedings of SPIE (March 21 2007)
Progress of the EUVL alpha tool
Proceedings of SPIE (August 20 2001)
Plasma Sn cleaning integrated in EUV source system
Proceedings of SPIE (March 21 2008)

Back to Top