Semiconductor growth interface from solution in short-duration low-gravity environment

Yuko Inatomi; Thomas Kaiser; Peter W. Dold; Klaus-Werner Benz; Kazuhiko Kuribayashi

doi:10.1117/12.351271

6 July 1999 Semiconductor growth interface from solution in short-duration low-gravity environment

Yuko Inatomi, Thomas Kaiser, Peter W. Dold, Klaus-Werner Benz, Kazuhiko Kuribayashi

Proceedings Volume 3792, Materials Research in Low Gravity II; (1999) https://doi.org/10.1117/12.351271
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

An in situ observation setup for the growth process based on near-IR microscopic interferometry was modified for a short- duration low-gravity experiment. Subsequently the observation in the environments were performed to reveal the influence of strongly-damped fluid flow on the growth process using the parabolic flights of an airplane and the free-fall of a drop capsule. As result, the dissolution and growth rates were successfully obtained using the setup with a high accuracy. It was also found that the rates were strongly decelerated during the low gravity conditions.

Citation Download Citation

Yuko Inatomi, Thomas Kaiser, Peter W. Dold, Klaus-Werner Benz, and Kazuhiko Kuribayashi "Semiconductor growth interface from solution in short-duration low-gravity environment", Proc. SPIE 3792, Materials Research in Low Gravity II, (6 July 1999); https://doi.org/10.1117/12.351271

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