(¯201) [beta]-Gallium oxide substrate for high quality GaN materials

I. S. Roqan; M. M. Muhammed

doi:10.1117/12.2076475

13 March 2015 (^-201) β-Gallium oxide substrate for high quality GaN materials

I. S. Roqan, M. M. Muhammed

Proceedings Volume 9364, Oxide-based Materials and Devices VI; 93641K (2015) https://doi.org/10.1117/12.2076475
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

(-201) oriented β-Ga₂O₃ has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga₂O₃ are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga₂O₃ are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~10⁸ cm^-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.

Citation Download Citation

I. S. Roqan and M. M. Muhammed "(^-201) β-Gallium oxide substrate for high quality GaN materials", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641K (13 March 2015); https://doi.org/10.1117/12.2076475

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