Paper
20 May 2016 Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems
Atia Shafique, Emre C. Durmaz, Barbaros Cetindogan, Melik Yazici, Mehmet Kaynak, Canan B. Kaynak, Yasar Gurbuz
Author Affiliations +
Abstract
This paper presents the design, modelling and simulation results of silicon/silicon-germanium (Si/SiGe) multi-quantum well based bolometer detector for uncooled infrared imaging system. The microbolometer is designed to detect light in the long wave length infrared (LWIR) range from 8 to 14 μm with pixel size of 25 x 25 μm. The design optimization strategy leads to achieve the temperature coefficient of resistance (TCR) 4.5%/K with maximum germanium (Ge) concentration of 50%. The design of microbolometer entirely relies on standard CMOS and MEMS processes which makes it suitable candidate for commercial infrared imaging systems.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atia Shafique, Emre C. Durmaz, Barbaros Cetindogan, Melik Yazici, Mehmet Kaynak, Canan B. Kaynak, and Yasar Gurbuz "Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191T (20 May 2016); https://doi.org/10.1117/12.2224778
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Cited by 3 scholarly publications.
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KEYWORDS
Microbolometers

Sensors

Germanium

Infrared imaging

Imaging systems

Bolometers

Silicon

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