Neuromorphic computing has been raised as an excellent alternative to conventional digital computing due to scaling limits and heat removal difficulties. At the same time, neuromorphic computing makes special memory requirements, such as high-speed, durability, compatibility with CMOS technology. ReRAM meets these requirements perfectly. Therefore, the goal of this work is to better understand the physics of growth and rupture of metal-like filament in ReRAM.
Porous OSG low-k dielectrics deposited by using TEOS and MTEOS mixture with different ratios and Brij® 30 surfactant. The deposited samples contain a different concentration of terminal methyl groups that is proportional to MTEOS concentration. An increase in the methyl groups concentration by changing TEOS/MTEOS ratio decreases the open porosity, k-value, and Young’s modulus and increases the mean pore radius although the template concentration was kept constant. Plasma damage by fluorine radicals depends on the carbon concentration in the films. It can be reduced by 60% when the carbon concentration in the film exceeds 10 atomic percent as measured by XPS (the films deposited with TEOS/MTEOS ratio 40/60).
This paper presents results achieved in thin films deposition of hafnium oxide by using the Russian system “Izofaz TM 200-01” developed by the Research Institute of Precision Machine Manufacturing. Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) and oxygen plasma were used as precursors for atomic layer deposition. Thin films with various thicknesses (100-300 Å) of high uniformity and overall quality were obtained.
Cellular-automata model of oxygen plasma influence on the integral properties of porous low-K dielectric is studied. The present work investigates the imitative simulation of this process. In our model we consider one isolated pore, which is simulated by cylinder with length L=200 nm and radius 1 nm ignoring the curvature factor. The simulation was performed for 2 million automata steps that correspond to 2 seconds in the real process time. Extrapolating the data to the longer time shows that more and more •CH3 groups will be replaced by the •OH groups, and over time almost all methyl groups will leave the pore surface (there is not more than 20% of the initial methyl groups amount on the first low-K dielectric 40nm after 2 seconds simulation).
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