This course provides a comprehensive overview of MOS, bipolar and HBT transistor modeling with emphasis for RF and high-speed IC design. Using CMOS for implementing RF circuits for wireless communications has been demonstrated. One of the obstacles for a large industrial use of CMOS in RF circuits is the lack of good MOS transistor models that are valid up to RF. The first module of this course describes the special aspects of the MOS transistor modeling for RFIC design, including noise, NQS, small and large signal modeling. Bipolar transistors have been the workhorses in analog/RF application for decades. Modern SiGe HBT has emerged as choice of technology for low-cost RF systems-on-chip. The second module will identify the bipolar compact modeling status and introduce advanced models such as HICUM, MEXTRAM and VBIC. In particular, physical effects, high-current effects and lateral scalability that are relevant for designing high-speed circuits are discussed with real data. Model parameter extraction, in particular from the real-world characterization is crucial and remains as an important practical issue addressed in the 3rd module of this course.