Ms. Cynthia Zhu Profile

Cynthia Zhu

Technical Marketing Engineer at Siemens EDA

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Publications (7)

Proceedings Article | 15 March 2016 Paper

Source mask optimization study based on latest Nikon immersion scanner

Jun Zhu, Fang Wei, Lijun Chen, Chenming Zhang, Wei Zhang, Hisashi Nishinaga, Omar El-Sewefy, Gen-Sheng Gao, Neal Lafferty, Jason Meiring, Recoo Zhang, Cynthia Zhu

Proceedings Volume 9780, 97801P (2016) https://doi.org/10.1117/12.2223576

KEYWORDS: Source mask optimization, Scanners, Photomasks, Fiber optic illuminators, Logic, Lithography, Semiconducting wafers, Visualization, SRAF, Back end of line

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Proceedings Article | 15 March 2016 Paper

A novel full chip process window OPC based on matrix retargeting

Xima Zhang, Zhitang Yu, Qingwei Liu, Xuan Shen, Liguo Zhang, Le Hong, Vlad Liubich, George Lippincott, Cynthia Zhu, James Word

Proceedings Volume 9780, 97801C (2016) https://doi.org/10.1117/12.2219913

KEYWORDS: Computer programming, Optical proximity correction, Resolution enhancement technologies, Metals, Computational lithography, Model-based design, Photomasks, Optical lithography, Lithography, Semiconducting wafers, Data modeling, Visualization

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Proceedings Article | 12 April 2013 Paper

Compatibility of optimized source over design changes in the foundry environment

Jojo Pei, Feng Shao, Omar ElSewefy, Cynthia Zhu, Verne Xu, Yu Zhu, Liguo Zhang, Xuelong Shi, Qingwei Liu, Aasutosh Dave

Proceedings Volume 8683, 86831M (2013) https://doi.org/10.1117/12.2013704

KEYWORDS: Source mask optimization, Resolution enhancement technologies, Neodymium, Optical proximity correction, Photomasks, Ions, Molybdenum, Laser induced plasma spectroscopy, Logic, Calibration

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Proceedings Article | 13 March 2012 Paper

Full-chip correction of implant layer accounting for underlying topography

Minchul Oh, Hyungjoo Youn, Noyoung Chung, Jaeyeol Maeng, Sukjoo Lee, Jahum Ku, Aasutosh Dave, John Sturtevant, Uwe Hollerbach, Thuy Do, Yuri Granik, Kostas Adam, Juhwan Kim, Cynthia Zhu, S. W. Jung

Proceedings Volume 8326, 83262R (2012) https://doi.org/10.1117/12.917984

KEYWORDS: Photomasks, Optical proximity correction, Oxides, Critical dimension metrology, Semiconducting wafers, Reflectivity, Calibration, Data modeling, Model-based design, Photoresist materials

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Proceedings Article | 16 March 2009 Paper

Inverse vs. traditional OPC for the 22nm node

James Word, Yuri Granik, Marina Medvedeva, Sergei Rodin, Luigi Capodieci, Yunfei Deng, Jongwook Kye, Cyrus Tabery, Kenji Yoshimoto, Yi Zou, Hesham Diab, Mohamed Gheith, Mohamed Habib, Cynthia Zhu

Proceedings Volume 7274, 72743A (2009) https://doi.org/10.1117/12.814339

KEYWORDS: Optical proximity correction, Photomasks, Metals, Double patterning technology, Resolution enhancement technologies, Lithography, Manufacturing, Logic, Shape analysis, Visualization

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Proceedings Article | 14 March 2006 Paper

Challenges and solutions for trench lithography beyond 65nm node

Zhijian Lu, Chi-Chien Ho, Mark Mason, Andrew Anderson, Randy Mckee, Ricky Jackson, Cynthia Zhu, Mark Terry

Proceedings Volume 6156, 615617 (2006) https://doi.org/10.1117/12.659242

KEYWORDS: Optical proximity correction, Metals, Model-based design, Design for manufacturing, Lithography, Process modeling, Reticles, Semiconducting wafers, Resolution enhancement technologies, Optimization (mathematics)

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Proceedings Article | 2 June 2003 Paper

Single wafer process to generate reliable swing curves

Yiming Gu, Cynthia Zhu, John Sturtevant

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483435

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Silicon, Coating, Silicon films, Reflectivity, Photoresist processing, Photoresist materials, Signal to noise ratio, Solids

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Swing curve generation is an important and common exercise in the design, characterization, and optimization of photolithography processes. The development of a robust anti-reflective strategy for a given process often necessitates multiple experimental iterations of the swing curve generation. The traditional methodology for generating a photoresist thickness swing curve plot is time and silicon intensive; usually involving processing and metrology on a dozen or more wafers. In addition, the resulting curve often can convolve systematic and random wafer-wafer effects due to other track/resist/scanner related variables. In some cases, such as very low reflectivity underlying substrate the signal to noise ratio is poor enough to effectively mask the sinusoidal swing behavior from visibility. In this paper, we present a new methodology to generate a swing curve by using a single wafer. The critical point of this method is to generate a temperature gradient on the wafer during the initial step of photoresist dispense and coating. Since the resist viscosity is inversely proportional to the temperature, a significant resist thickness variation can be produced across the wafer, which can easily encompass one swing period of thickness or more. The resulting resist thickness signature across the wafer is seen to be very repeatable, such that a companion wafer can be measured at multiple positions corresponding to CD metrology lcoations on the patterned wafer. The possibility of deconvolving systematic across wafer CD variability due to other process variables is discussed by characterizing a control wafer with conventional uniform resist thickness. Our experiments for I-line and DUV resists indicated that this method not only provides reliable swing curves but also saves photoresist, silicon, and time both for engineering and machine. Moreover, this methodology represents an improved signal to noise ratio such that makes it particularly useful for ARC thickness/composition optimization. Several examples utilizing this method will be presented.

Showing 5 of 7 publications

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