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Fen Lin
Research Scholar at National Univ of Singapore
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Publications (1)
Proceedings Article | 7 January 2008 Paper
Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
Fen Lin, Ning Xiang, Peng Chen, Soo Jin Chua, Afshan Irshad, Stefan Roither, Audrius Pugzlys, Andrius Baltuska
Proceedings Volume 6824, 68240T (2008) https://doi.org/10.1117/12.756401
KEYWORDS: Gallium nitride, Quantum wells, Absorption, Crystals, Picosecond phenomena, Metalorganic chemical vapor deposition, Gallium, Transmission electron microscopy, Sapphire lasers, Laser beam diagnostics
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