Dr. Hassan Ouacha Profile

Dr. Hassan Ouacha

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Proceedings Article | 24 April 2003 Paper

Low-temperature InO_x thin films for O₃ and NO₂ gas sensing

George Kiriakidis, Hassan Ouacha, N. Katsarakis, Kosmas Galatsis, Wojtek Wlodarski

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.501464

KEYWORDS: Indium oxide, Thin films, NOx, Ozone, Sensors, Gas sensors, Crystals, Temperature metrology, Gases, Sputter deposition

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The desirable electrical properties of InO_x thin films and their response towards oxidizing gases has promoted InO_x to be recognized as a promising material for gas sensors. In this study, InO_x films in the thickness range of 10-1000 nm were deposited onto Corning 7059 glass substrates by dc magnetron sputtering. Their structural, electrical, and O₃ and NO₂ sensing properties were analyzed. Structural investigations carried out by XRD and AFM showed a strong correlation between crystallinity, surface topology and gas sensitivity. Moreover, the electrical conductivity exhibited a change of over six orders of magnitude during the processes of photoreduction and oxidation. The films deposited on alumina transducers were calibrated towards O₃ and NO₂ at temperatures from 50-300 °C. The sensors show promising characteristics as they exhibited reproducible and stable responses. The 50 nm thin film had a response of over 10 towards 50 ppb of ozone operating at 50°C, while the 20 nm film had a response of over 22 towards 0.1 ppm of NO₂ at 100°C.

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