Mr. Hilbert Van Loo Profile

Hilbert Van Loo

at ASML Netherlands BV

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Proceedings Article | 28 November 2023 Presentation + Paper

Measurement of image fading impact on 20P40 contact hole LCDU

Sam Borman, Dominykas Gustas, Hilbert van Loo, Tian Gang, Dorothe Oorschot, Andreas Brouwer, Alberto Colina, Frank Horsten, Tasja van Rhee

Proceedings Volume PC12750, PC127500A (2023) https://doi.org/10.1117/12.2686368

KEYWORDS: Overlay metrology, Simulations, Semiconducting wafers, Scanners, Pupil aberrations, Nanoimprint lithography, Lithography, Light sources and illumination

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In lithography, Local CD Uniformity (LCDU) is defined as the CD variability of a feature on small length scales (< 10 µm conventionally). It is a dominant contributor to edge placement error (EPE) budgets and therefore has a major impact on product yield. An important factor on LCDU is contrast loss due to aerial image shift with respect to the scanned wafer, commonly known as image fading. This study shows the results of an experiment where the fading effect on LCDU of P40 regular 20 nm contact holes is investigated on an ASML NXE:3400B scanner. Linear fading is introduced via deliberate stage desynchronizations by employing actuated overlay corrections in slit (x-) and scan (y-) directions separately. We observe significantly different LCDU sensitivities of the considered feature to x- and y-fading. The measurements are corroborated by Hyperlith simulations. In these simulations the induced image fading is represented as Z2 and Z3 aberrations of corresponding magnitude for x- and y-directions, respectively. From the resultant image the Normalized Image Log Slope (NILS) is determined, which can then be matched to the LCDU measurements. When other known contributors, such as projection lens fading and illumination pupil variation through the slit width, are taken into account, we are able to accurately reconstruct the experimental LCDU data. This shows that the LCDU sensitivities to linear fading can be successfully determined, which is a step towards EPE-optimized solutions.

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