Dr. Junwei Bao Profile

Dr. Junwei Bao

CEO at Innovusion Inc

SPIE Involvement:

Author | Instructor

Publications (6)

Proceedings Article | 2 June 2000 Paper

Phase profilometry for the 193-nm lithography gate stack

Nickhil Jakatdar, Xinhui Niu, Junwei Bao, Costas Spanos, Sanjay Yedur, Alain Deleporte

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386464

KEYWORDS: Fourier transforms, Metrology, Lithography, Diffraction gratings, Diffraction, Thin films, Spectroscopy, Reflectance spectroscopy, Curium, Reflectometry

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Proceedings Article | 2 June 2000 Paper

Specular spectral profilometry on metal layers

Junwei Bao, Xinhui Niu, Nickhil Jakatdar, Costas Spanos, Joseph Bendik

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386454

KEYWORDS: Metals, Scanning electron microscopy, Metrology, Spectroscopy, Diffraction gratings, Diffraction, Tin, Light scattering, Scatterometry, Critical dimension metrology

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Proceedings Article | 14 June 1999 Paper

Specular spectroscopic scatterometry in DUV lithography

Xinhui Niu, Nickhil Jakatdar, Junwei Bao, Costas Spanos, Sanjay Yedur

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350802

KEYWORDS: Scatterometry, Diffraction, Spectroscopes, Diffraction gratings, Spectroscopy, Metrology, Lithography, Atomic force microscopy, Critical dimension metrology, Photoresist materials

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Proceedings Article | 14 June 1999 Paper

Parameter extraction framework for DUV lithography simulation

Nickhil Jakatdar, Junwei Bao, Costas Spanos, Xinhui Niu, Joseph Bendik, Stephen Hill

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350831

KEYWORDS: Lithography, Semiconducting wafers, Data modeling, Calibration, FT-IR spectroscopy, Process modeling, Semiconductors, Ellipsometry, Refractive index, Standards development

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Proceedings Article | 11 June 1999 Paper

Physical modeling of deprotection-induced thickness loss

Nickhil Jakatdar, Junwei Bao, Costas Spanos, Ramkumar Subramanian, Bharath Rangarajan

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350210

KEYWORDS: Data modeling, Photoresist processing, Chemically amplified resists, Lithography, Polymers, Systems modeling, Molecules, Process modeling, Interfaces, Computing systems

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Proceedings Article | 27 April 1999 Paper

Physically based model for predicting volume shrinkage in chemically amplified resists

Nickhil Jakatdar, Junwei Bao, Costas Spanos, Ramkumar Subramanian, Bharath Rangarajan, Andrew Romano

Proceedings Volume 3743, (1999) https://doi.org/10.1117/12.346920

KEYWORDS: Data modeling, Chemically amplified resists, Photoresist processing, Systems modeling, Polymers, Process modeling, Lithography, Molecules, Interfaces, Computing systems

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Showing 5 of 6 publications

Course Instructor

SC831: Introduction to Scatterometry Metrology: Theory and Application

This course provides an introduction to the theory of scatterometry metrology, as well as its application for process control in semiconductor manufacturing. Both the software and the hardware portions of the scatterometry system are covered. Scatterometry is an optical method to measure profiles (CD, sidewall angle, height) features on semiconductor wafers and photomasks. Scatterometry is becoming widely adopted for production-worthy metrology as an alternative and complementary tool to CD-SEM and AFM.

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