Mr. Kenjirou Maeda Profile

Kenjirou Maeda

at Osaka Institute of Technology

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 20 December 2006 Paper

Development of MgSiO3 biocompatible piezoelectric film for bio-MEMS actuator

Kenjirou Maeda, Toshiyuki Uenoya, Kazuyoshi Tsuchiya, Yasutomo Uetsuji, Eiji Nakamachi

Proceedings Volume 6415, 64150P (2006) https://doi.org/10.1117/12.695753

KEYWORDS: Sputter deposition, Crystals, Thin films, Annealing, Actuators, Silicon, Diffraction, Plasma, Numerical analysis, Perovskite

Read Abstract +

In this study, a sputtering technique for a Bio-MEMS thin film piezoelectric actuator is developed, by employing a newly designed biocompatible piezoelectric material MgSiO3 that has a tetragonal perovskite lattice crystal structure. This crystal structure was designed by using numerical analyses, such as the HSAB rule, the geometrical compatibility assessment and the first principle based DFT calculation. In general, MgSiO3 has an orthorhombic perovskite structure in the nature. Therefore, we try to generate a tetragonal structure by employing 1) the helicon wave plasma sputtering (HWPS) method, which can produce large energy atoms under a low working pressure and easy to control the lattice constant for growing the tetragonal structure of MgSiO3 and 2) a bio-compatible substrate Ir/Ti/Si, to produce a thin film of MgSiO3 tetragonal perovskite. Ir/Ti/Si substrate has better compatibility with MgSiO3 (111) plane, because of its close lattice constant. An optimal condition of HWPS to generate MgSiO3 tetragonal perovskite structure was sought by using the experimental design method and the response surface method. We found that 1) the substrate temperature and 2) the target composition ratio are significant influent factors for MgSiO3 film generation. In this searching process, we evaluated the properties of MgSiO3 films by 1) the surface roughness measured by AFM, and 2) the chemical compositions measured by XPS, and 3) the crystal structure by XRD. Finally, MgSiO3 thin film was successfully fabricated and the piezoelectric and ferroelectrics properties were measured.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years