The effect of carrier gas on thick GaN film grown by hydride vapour phase epitaxy on (0001) sapphire substrate has been
studied by double crystal X-ray diffraction (DCXRD), field emission scanning electron microscope (FE-SEM),
photoluminescence (PL) and Hall tester. H2, as carrier, is propitious to two-dimension growth pattern of GaN film, but it
causes production of more defects and impurities. Red shift of band edge emission of PL and a wider FWHM (full wave
at half maximum) of DCXRD appear under H2 atmosphere. N2, as carrier, reduces the content of defects and impurities.
However, the growth interface of GaN forms easily crystallographic facets but not epitaxial (0002) plane, which leads to
appearing of embossed surface. It may gain high-quality HVPE-GaN that H2 and N2 are adopted as carrier gas
sequentially.
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