Mr. Yi Li Profile

Yi Li

Member of Technical Staff at Headway Technologies Inc

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Proceedings Article | 5 April 2007 Paper

Evaluation of AIM overlay mark for thin film head application

Yi Li, Alan Fan, Gary Etheridge, Gerald Finken, Darrel Louder

Proceedings Volume 6518, 65182W (2007) https://doi.org/10.1117/12.712332

KEYWORDS: Semiconducting wafers, Overlay metrology, Oxides, Thin films, Head, Metrology, Imaging metrology, Reticles, Data modeling, Critical dimension metrology

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Overlay control becomes more crucial for wafer processing in thin film head (TFH) industry with continuous shrinkage in Critical Dimension (CD) in order to achieve higher data storage capacity. High topographic feature and thick transparent oxide between two overlay layers are unique challenges for TFH overlay measurement. It is important to know if overlay target represents the true overlay and its effect on overlay control. In this work, three overlay marks, Box-in-Box (BiB), Frame-in-Frame (FiF) and KLA-Tencor Advanced Imaging Metrology (AIM), were evaluated under different process conditions. The performance study of the overlay marks included following tests: overlay precision, Tool Induced Shift (TIS) variability and Total Measurement Uncertainty (TMU); effect of photo resist thickness and transparent oxide spacing between two overlay layers; overlay mark fidelity (OMF) from array test; analysis of stepper correctable terms residuals. It was found that AIM marks provided better metrology tool performance than BiB and FiF in terms of precision, TIS variability and TMU. It was also found that precision and TIS variability were sensitive to photo resist thickness and oxide thickness. Smaller overlay residual error was achieved using AIM target and OMF could be improved too.

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