Dr. Ying-Qiang Xu Profile

Dr. Ying-Qiang Xu

at Institute of Semiconductors CAS

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Author

Publications (11)

Proceedings Article | 17 May 2019 Paper

1.2-um InAs/GaAs high-density quantum dot laser

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hai-Qiao Ni, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11170, 1117014 (2019) https://doi.org/10.1117/12.2532696

KEYWORDS: Quantum dots, Indium arsenide, Gallium arsenide, Chemical species, Quantum dot lasers, Semiconductors, Semiconductor lasers, Waveguides, Silicon, Cladding

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Proceedings Article | 17 May 2019 Paper

Micro-stripe broad-area infrared diode lasers without deterioration of output power

Sheng-wen Xie, Zhi-chuan Niu, Cheng-Ao Yang, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Yu Zhang, Ying-qiang Xu

Proceedings Volume 11170, 111700Q (2019) https://doi.org/10.1117/12.2532478

KEYWORDS: Semiconductor lasers, Infrared radiation, Infrared lasers, Laser damage threshold, Continuous wave operation, Semiconductors, High power lasers, Semiconducting wafers, Etching, Optoelectronics

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Proceedings Article | 24 January 2019 Paper

Wavelength tuning of type-II “W” quantum well of interband cascade laser

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Proceedings Volume 11052, 110520L (2019) https://doi.org/10.1117/12.2521757

KEYWORDS: Indium arsenide, Quantum wells, Arsenic, Antimony, Wavelength tuning, Luminescence, Continuous wave operation, Gallium antimonide, Atomic force microscopy

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Proceedings Article | 24 January 2019 Paper

Single-mode distributed Bragg reflector lasers at 2.08 μm

Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Jin-Ming Shang, Ye Yuan, Fu-Hui Shao, Shu-Shan Huang, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11052, 110520M (2019) https://doi.org/10.1117/12.2521766

KEYWORDS: Semiconductor lasers, Distributed Bragg reflectors, Gallium antimonide, Epitaxy, Bragg gratings, Continuous wave operation, Waveguides, Arsenic, Antimony, Gallium

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Proceedings Article | 24 January 2019 Paper

1.3um InAs/InGaAs QD laser steady output power over 1.07W

Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hui-ming Hao, Ying-Qiang Xu, Hai-Qiao Ni, Yu Zhang, Zhi-Chuan Niu

Proceedings Volume 11052, 1105212 (2019) https://doi.org/10.1117/12.2521947

KEYWORDS: Quantum dots, Gallium arsenide, Plasma enhanced chemical vapor deposition, Reactive ion etching, Laser marking, Semiconductors, Molecular beam epitaxy, Semiconductor lasers, Continuous wave operation, Gallium

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Proceedings Article | 24 January 2019 Paper

Output power improvements of antimonide quantum well laser diodes by rapid thermal annealing on the cavity coating films

Sheng-Wen Xie, Cheng-Ao Yang, Ye Yuan, Shu-Shan Huang, Yi Zhang, Jin-ming Shang, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11052, 110520Q (2019) https://doi.org/10.1117/12.2521803

KEYWORDS: Reflectivity, Annealing, Coating, Semiconductor lasers, Gallium antimonide, Quantum wells, Aluminum, Scanning electron microscopy, Waveguides, Gallium

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Proceedings Article | 19 November 2018 Paper

Study of InGaAs/InAlAs avalanche photodiodes grown on InP

Da-nong Zheng, Ying-Qiang Xu, Hai-Qiao Ni, Zhichuan Niu

Proceedings Volume 10826, 1082621 (2018) https://doi.org/10.1117/12.2515586

KEYWORDS: Avalanche photodetectors, Avalanche photodiodes, Indium gallium arsenide, Absorption, Doping, Infrared radiation, Capacitance, Atomic force microscopy, Superlattices, Semiconductors

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Proceedings Article | 3 September 2008 Paper

Growth and characterization of short-period InAs/GaSb superlattice photoconductors

Jie Guo, Weigo Sun, Yingqiang Xu, Zhiqiang Zhou, Zhichuan Niu

Proceedings Volume 7055, 70550U (2008) https://doi.org/10.1117/12.791978

KEYWORDS: Gallium antimonide, Laser sintering, Indium arsenide, Sensors, Superlattices, Gallium arsenide, Photoresistors, Absorption, Infrared detectors, Black bodies

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Proceedings Article | 12 May 2004 Paper

Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Ying-Qiang Xu, Wei Zhang, Zichuang Niu, Ronghan Wu, Qiming Wang

Proceedings Volume 5280, (2004) https://doi.org/10.1117/12.523225

KEYWORDS: Nitrogen, Quantum wells, Annealing, Diffusion, Chemical species, Luminescence, Gallium arsenide, Optoelectronics, Semiconductors, Optical properties

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Proceedings Article | 19 October 2001 Paper

Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing

Yinqiang Xu, Lianhe Li, Zhong Pan, Yaowang Lin, Qiming Wang

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.444956

KEYWORDS: Annealing, Quantum wells, Diffusion, Gallium arsenide, Lithium, Silica, Optoelectronics, Semiconductors, Temperature metrology, Indium gallium arsenide

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Proceedings Article | 19 October 2001 Paper

1.3 um GaInNAs/GaAs quantum well lasers and photodetectors

Zhong Pan, Yaowang Lin, Lianhe Li, Yinqiang Xu, Wei Zhang, Rong Han Wu

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.444943

KEYWORDS: Quantum wells, Photodetectors, Plasma, Gallium arsenide, Chemical species, Semiconductor lasers, Vertical cavity surface emitting lasers, Laser damage threshold, Ions, Annealing

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Showing 5 of 11 publications

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