High-resolution sidewall observation and LER measurement of a photoresist pattern by a metrological tilting-AFM

Ryosuke Kizu; Ichiko Misumi; Akiko Hirai; Satoshi Gonda

doi:10.1117/12.2614122

13 June 2022 High-resolution sidewall observation and LER measurement of a photoresist pattern by a metrological tilting-AFM

Ryosuke Kizu, Ichiko Misumi, Akiko Hirai, Satoshi Gonda

Author Affiliations +

Proceedings Volume PC12053, Metrology, Inspection, and Process Control XXXVI; PC1205307 (2022) https://doi.org/10.1117/12.2614122
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Sidewall roughness of a photoresist pattern is important information to consider such as a relation between LERs (or LWRs) of the resist and etched pattern. It is well known that sidewall of a dry-etched Si pattern shows vertical striations (anisotropic roughness) [Kizu et al., JM3 19, 014003 (2020)]. On the other hand, in the case of photoresist, although there are several studies about photoresist sidewall roughness, neither high-resolution sidewall measurement nor roughness evaluation techniques has been established. In this study, we measured photoresist sidewall with high-resolution using a metrological tilting-AFM, which is able to measure vertical sidewall of a line pattern owing to tilted AFM-probe. The result showed the photoresist sidewall roughness has height dependency in contrast to that of a Si line pattern. Further result and discussion will be presented in the conference.

Conference Presentation

Citation Download Citation

Ryosuke Kizu, Ichiko Misumi, Akiko Hirai, and Satoshi Gonda "High-resolution sidewall observation and LER measurement of a photoresist pattern by a metrological tilting-AFM", Proc. SPIE PC12053, Metrology, Inspection, and Process Control XXXVI, PC1205307 (13 June 2022); https://doi.org/10.1117/12.2614122

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KEYWORDS

Photoresist materials

Line edge roughness

Metrology

Atomic force microscopy

Lithography

Scanning electron microscopy

Anisotropy

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