Using recently developed laser-assisted synthesis technique (LAST), we demonstrate, for the first time, transient absorption (TA) exciton dynamics of W- and Mo-families of TMDs that have strong excitation fluence dependence and reach extremely long, several nanosecond lifetimes at the highest fluences. To put this in the context, all previous observations have shown tens of picosecond lifetimes at high powers (due to Auger recombination). Using a variety of experimental approaches (excitation wavelength and temperature dependent measurements) and comparing the results with TMD samples in a freestanding form, we trace our observations to the amount of strain produced in the LAST samples by the specifics of high temperature growth and substrate cooling. Using kinetic modeling, we relate these observations to the strain-induced modifications of electronic bands and associated population of intervalley dark excitons that can now interplay with intravalley (bright) excitations.
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