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17 March 2023 N-Polar InGaN nanowires for high efficiency red micro-LEDs
Yakshita Malhotra, Ayush Pandey, Ping Wang, Kai Sun, Xianhe Liu, Zetian Mi
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Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC1243006 (2023) https://doi.org/10.1117/12.2643288
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
A high efficiency, micrometer or submicron scale light emitting diode (LED) is essentially required for the emerging virtual reality and augmented reality. However, conventional LED fabrication methods suffer from a large drop in efficiency on scaling the device size. In this work, we report a N-polar InGaN nanowire micro-scale LED emitting efficiently in the red spectrum. A peak external quantum efficiency of ~1.2% is measured for LEDs emitting at 620nm, with lateral dimensions ~750nm: consisting of just 6-7 InGaN nanowires. This efficiency value is nearly one order of magnitude higher than conventional quantum-well micro-LEDs of similar dimensions operating in this wavelength range.
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Yakshita Malhotra, Ayush Pandey, Ping Wang, Kai Sun, Xianhe Liu, and Zetian Mi "N-Polar InGaN nanowires for high efficiency red micro-LEDs", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC1243006 (17 March 2023); https://doi.org/10.1117/12.2643288
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KEYWORDS
Nanowires
Indium gallium nitride
Light emitting diodes
Augmented reality
External quantum efficiency
Heterojunctions
Quantum efficiency
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