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13 March 2024 Excitons in 1D and 2D semiconductors
John R. Schaibley
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Proceedings Volume PC12888, 2D Photonic Materials and Devices VII; PC128880A (2024) https://doi.org/10.1117/12.3012236
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Excitons in van der Waals semiconductors interact strongly with light and have been the subject of intense investigation for future optoelectronic applications. In this presentation, I will report our recent studies on excitons in MoSe2 and WSe2 heterostructures, including measurements on the spatial coherence of interlayer excitons, and the localization of excitons using lithographically defined graphene gates. I will also discuss our recent studies on a one-dimensional van der Waals semiconductor SbPS4. SbPS4 can be exfoliated using the scotch tape method to yield long (several micron) nanobundles with typical thicknesses of 1-100 nm. The nanobundles emit ultra-broadband and bright photoluminescence when excited with 400 nm light.
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John R. Schaibley "Excitons in 1D and 2D semiconductors", Proc. SPIE PC12888, 2D Photonic Materials and Devices VII, PC128880A (13 March 2024); https://doi.org/10.1117/12.3012236
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KEYWORDS
Excitons
Semiconductors
Graphene
Heterojunctions
Optoelectronics
Photoluminescence
Spatial coherence
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