Paper
1 March 1974 Image Converter With III-V Compound Reflective Mode Photocathode
H. L. Palmer, N. J. Koda, John H. Dinan
Author Affiliations +
Abstract
Very high luminous sensitivities and quantum efficiencies have been reported for III-V compound photocathodes operated in the reflective mode. Sensitivities as high as 2000 μA/lumen for GaAs have been reported (Ref.l) on a research basis. However, most practical imaging devices require operation of the cathode in a semitransparent mode. When semitransparent III-V photocathodes are synthesized by such techniques as epi layers grown on transparent substrates, much lower sensitivities than reflective-mode cathodes are reported. In addition, the broadband response capabilities of the reflectronic mode are generally compromised to some degree when the latter technique is used. Thus, the substantially increased sensitivity of the reflective mode compared to the transmissive mode is sufficient motivation to evaluate possible methods for using reflective III-V compound reflective photocathodes in imaging devices.
© (1974) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. L. Palmer, N. J. Koda, and John H. Dinan "Image Converter With III-V Compound Reflective Mode Photocathode", Proc. SPIE 0042, Image Intensifiers: Technology, Performance, Requirements, and Applications, (1 March 1974); https://doi.org/10.1117/12.953862
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Reflectivity

Gallium arsenide

Modulation transfer functions

Diodes

Mirrors

Quantum efficiency

Cesium

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