Progress In Copper Indium Diselenide Thin-Film Photovoltaic Device Research

Allen Hermann; Ken Zweibel

doi:10.1117/12.935692

8 September 1983 Progress In Copper Indium Diselenide Thin-Film Photovoltaic Device Research

Allen Hermann, Ken Zweibel

Proceedings Volume 0407, Photovoltaics for Solar Energy Applications II; (1983) https://doi.org/10.1117/12.935692
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

Recent results on CuInSe2 from the United States Department of Energy (DOE) Polycrystalline Thin-Film Device Program are presented. The program, managed by the Solar Energy Research Institute (SERI), encompasses mate-rials and device research in a variety of highly absorbing compound semiconductors with emphasis on CuInSe₂, for which thin-film device efficiences of 11% (AM1) have been reported. This paper describes film deposition techniques including coevaporation from the elements, reactive sputtering, and spray pyrolysis. Electrical and optical characterization of the films is discussed, and experiments on control of carrier type and concentra-tion are outlined. Differences from corresponding results on single-crystal CuInSe2 are discussed in terms of defect-chemistry models. Experiments on heterojunction formation of CuInSe₂ with CdS or (Cd,Zn)S are presented, and recent results in device characterization and modeling are discussed. Central problems in the achievement of higher efficiency devices are described. Low open-circuit voltages and the role of oxygen in post-deposition anneal are discussed. Scalability of techniques for the deposition of device-quality CuInSe₂ is also discussed in light of the recent announcement of plans for commercialization of thin-film CdS/CuInSe₂ devices.

Citation Download Citation

Allen Hermann and Ken Zweibel "Progress In Copper Indium Diselenide Thin-Film Photovoltaic Device Research", Proc. SPIE 0407, Photovoltaics for Solar Energy Applications II, (8 September 1983); https://doi.org/10.1117/12.935692

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