Picosecond Semiconductor Lasers For Characterizing High-Speed Image Shutters

T. S. Pagano; F. J. Janson; G. J. Yates; S. A. Jaramillo

doi:10.1117/12.949858

14 January 1986 Picosecond Semiconductor Lasers For Characterizing High-Speed Image Shutters

T. S. Pagano, F. J. Janson, G. J. Yates, S. A. Jaramillo

Proceedings Volume 0569, High Speed Photography, Videography, and Photonics III; (1986) https://doi.org/10.1117/12.949858
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

A portable system that utilizes solid state electronic timing circuits and a pulsed semiconductor laser for characterizing the optical gate sequence of high-speed image shutters, including microchannel-plate intensifier tubes (MCPTs), and silicon-intensified target vidicons (SITVs), is described and compared to earlier methods of characterization. Gate sequences obtained using the system and streak camera data of the semiconductor laser pulse are presented, with a brief discussion of the electronic delay timing and avalanche circuits used in the system.

Citation Download Citation

T. S. Pagano, F. J. Janson, G. J. Yates, and S. A. Jaramillo "Picosecond Semiconductor Lasers For Characterizing High-Speed Image Shutters", Proc. SPIE 0569, High Speed Photography, Videography, and Photonics III, (14 January 1986); https://doi.org/10.1117/12.949858

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