Comparison of ALD and IBS Al2O3 films for high power lasers

Hao Liu; Lars Jensen; Jürgen Becker; Marc Christopher Wurz; Ping Ma; Detlev Ristau

doi:10.1117/12.2245051

6 December 2016 Comparison of ALD and IBS Al₂O₃ films for high power lasers

Hao Liu, Lars Jensen, Jürgen Becker, Marc Christopher Wurz, Ping Ma, Detlev Ristau

Author Affiliations +

Proceedings Volume 10014, Laser-Induced Damage in Optical Materials 2016; 1001421 (2016) https://doi.org/10.1117/12.2245051
Event: SPIE Laser Damage, 2016, Boulder, Colorado, United States

Abstract

Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al₂O₃ single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al₂O₃ single layers. ALD Al₂O₃ showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm². These properties are superior to the reference IBS Al₂O₃ single layers and indicate a high versatility of ALD Al₂O₃ for high power coatings.

Citation Download Citation

Hao Liu, Lars Jensen, Jürgen Becker, Marc Christopher Wurz, Ping Ma, and Detlev Ristau "Comparison of ALD and IBS Al₂O₃ films for high power lasers", Proc. SPIE 10014, Laser-Induced Damage in Optical Materials 2016, 1001421 (6 December 2016); https://doi.org/10.1117/12.2245051

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