Paper
27 March 2017 High-resolution, high-throughput, CMOS-compatible electron-beam patterning
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Abstract
Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool set. These resist processes were developed to address two limitations of conventional SEBL resist processes: (1) low areal throughput and (2) limited compatibility with the traditional microfabrication infrastructure.
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Melissa A. Smith, Steven A. Vitale, Theodore H. Fedynyshyn, Matthew T. Cook, Joel Maldonado, Dmitri Shapiro, and Mordechai Rothschild "High-resolution, high-throughput, CMOS-compatible electron-beam patterning", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461H (27 March 2017); https://doi.org/10.1117/12.2256649
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Electron beam lithography

Etching

Photoresist processing

Silicon

Photoresist materials

Lithography

Microfabrication

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