Paper
8 March 1989 Optical Pulse Shaping With A Semiconductor Optical Amplifier
S. Ruiz-Moreno, M. J . Soneira, M. A. Garcia-Sempere
Author Affiliations +
Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949963
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
A new way to approach the characterization of an all optical regenerator is presented in this paper. The device consists of a semiconductor amplifier laser containing an homogeneous mixture of saturable media (gain and absorption) with different saturation parameters. A modification introduced in the photon density matrix equation is the clue idea of the proposed characterization. Using this characterization it will be shown in the present paper that a semiconductor with such characteristics, and a proper design, may improve the profile of the pulses transmitted through an all optical link. It is also shown that the device may reduce the relative statistical fluctuations of the incident optical power.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Ruiz-Moreno, M. J . Soneira, and M. A. Garcia-Sempere "Optical Pulse Shaping With A Semiconductor Optical Amplifier", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949963
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KEYWORDS
Absorption

Optical amplifiers

Semiconductor lasers

Signal to noise ratio

Semiconductors

Nonlinear optical materials

Signal attenuation

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