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14 December 2016 Mechanism of luminescence from porous silicon
D. T. Yan, N. G. Galkin
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Proceedings Volume 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics; 101761W (2016) https://doi.org/10.1117/12.2268222
Event: Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 2016, Khabarovsk, Russia
Abstract
A strong nonlinear increase in the photoluminescence intensity under laser excitation at room temperature is found for porous silicon obtained by anodic oxidation. It is shown that the maximum photoluminescence intensity correspond to samples of anodically oxidized porous silicon in the intermediate oxidation state. Laser excitation is found to increase the intensity of vibrational modes in the O3 – SiH, Si-O-Si and Si-O-H configurations with respect to the Si-Hn mode intensity in IR absorption spectra. It is experimentally confirmed that the oxide structure on the surface of silicon crystallites and the structure of the Si/SiO2 interface determine to a great extent the photoluminescent characteristics.
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D. T. Yan and N. G. Galkin "Mechanism of luminescence from porous silicon", Proc. SPIE 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 101761W (14 December 2016); https://doi.org/10.1117/12.2268222
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KEYWORDS
Luminescence
Silicon
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