Study on flawed surface of GaAs epitaxial wafer in the process of wet chemical etching

Hongjin Qiu; Canglu Hu; Chaxia Peng; Kai Qiao; Xin Guo; Xuchuan Liu

doi:10.1117/12.2268546

8 March 2017 Study on flawed surface of GaAs epitaxial wafer in the process of wet chemical etching

Hongjin Qiu, Canglu Hu, Chaxia Peng, Kai Qiao, Xin Guo, Xuchuan Liu

Author Affiliations +

Proceedings Volume 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016; 102554Y (2017) https://doi.org/10.1117/12.2268546
Event: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 2016, Jinhua, Suzhou, Chengdu, Xi'an, Wuxi, China

Abstract

The flawed surface of GaAs/GaAlAs heterointerface after wet etching by H₂O₂ and NH₄OH based etch ant was studied in this work. The results showed that the surface of GaAs/GaAlAs heterointerface had convex point, etching pits, pinhole, fog point, and friction scratches were investigated with a etch step measurement. And imprinting the main reasons for the formation of the etching surface defects of GaAs/GaAlAs are the poor quality of epitaxial materials, the contamination of materials surface, the unclear interface of oxidation and doping, the inhomogeneity of concentration and the operation errors. The selective etching of the GaAs/GaAlAs material eliminates some flaws and improves the quality of the etching surface of the GaAs/GaAlAs material.

Citation Download Citation

Hongjin Qiu, Canglu Hu, Chaxia Peng, Kai Qiao, Xin Guo, and Xuchuan Liu "Study on flawed surface of GaAs epitaxial wafer in the process of wet chemical etching", Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554Y (8 March 2017); https://doi.org/10.1117/12.2268546

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