Tunneling And Noise Phenomena In HgCdTe Photodiodes

R. Adar; D. Rosenfeld; Y. Nemirovsky

doi:10.1117/12.951036

5 July 1989 Tunneling And Noise Phenomena In HgCdTe Photodiodes

R. Adar, D. Rosenfeld, Y. Nemirovsky

Proceedings Volume 1038, 6th Mtg in Israel on Optical Engineering; (1989) https://doi.org/10.1117/12.951036
Event: Sixth Meeting of Optical Engineering in Israel, 1988, Tel Aviv, Israel

Abstract

The reverse breakdown characteristics of 8-12μm Hg_1-x Cd_xTe photodiodes are experimentally measured and analyzed. Temperature dependence of the currents reveal that trap-assisted and direct band-to-band tunneling processes dominate the breakdown characteristics at low and high reverse bias regions respectively. The direct band-to-band characteristics are compared to theoretical predictions in implanted diodes on both gold-doped and undoped substrates. A good quantitative fit to theory is achieved based on experimental analysis of space charge density in the measured diodes depletion region using a C-V profiling technique. The direct tunneling characteristics also show empirical correlation with noise currents measured on gold-doped junctions.

Citation Download Citation

R. Adar, D. Rosenfeld, and Y. Nemirovsky "Tunneling And Noise Phenomena In HgCdTe Photodiodes", Proc. SPIE 1038, 6th Mtg in Israel on Optical Engineering, (5 July 1989); https://doi.org/10.1117/12.951036

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