Response time of semiconductor photodiodes

Andrew C. Harter; Alexander O. Goushcha; Bernd Tabbert

doi:10.1117/12.2294960

23 February 2018 Response time of semiconductor photodiodes

Andrew C. Harter, Alexander O. Goushcha, Bernd Tabbert

Proceedings Volume 10526, Physics and Simulation of Optoelectronic Devices XXVI; 105261L (2018) https://doi.org/10.1117/12.2294960
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

The conventional phenomenological approach describes the response time of semiconductor photodiodes to short laser pulses as time required for collection of non-equilibrium carriers via processes of drift and diffusion. The effect of displacement currents due to dielectric relaxation of majority carriers in the charge-neutral region of semiconductor photodiode is usually neglected. This paper shows that dielectric relaxation of majority carriers may dominate the slow response of not fully depleted photodiodes and has to be taken into account for correct analysis of silicon photodiode response to a brief laser pulse. A phenomenological expression for the photodiode response time that accounts for the displacement current effects is proposed and used to compare with experimental results.

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Citation Download Citation

Andrew C. Harter, Alexander O. Goushcha, and Bernd Tabbert "Response time of semiconductor photodiodes", Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105261L (23 February 2018); https://doi.org/10.1117/12.2294960

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