Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

Abbas Haddadi; Arash Dehzangi; Romain Chevallier; Thomas Yang; Manijeh Razeghi

doi:10.1117/12.2297475

26 January 2018 Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

Abbas Haddadi, Arash Dehzangi, Romain Chevallier, Thomas Yang, Manijeh Razeghi

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Proceedings Volume 10540, Quantum Sensing and Nano Electronics and Photonics XV; 1054004 (2018) https://doi.org/10.1117/12.2297475
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability. In contrast, type-II superlattices (T2SLs) are a developing new material system with intrinsic advantages such as great flexibility in bandgap engineering, low growth and manufacturing cost, high-uniformity, auger recombination suppression, and high carrier effective mass that are becoming an attractive candidate for infrared detection and imaging from short-wavelength infrared to very long wavelength infrared regime. We present the recent advancements in T2SL-based heterojunction phototransistors in e– SWIR, MWIR and LWIR spectral ranges. A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Then, we present the effect of vertical scaling on the optical and electrical performance of heterojunction phototransistors, where the performance of devices with different base width was compared as the base was scaled from 60 down to 40 nm.

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Abbas Haddadi, Arash Dehzangi, Romain Chevallier, Thomas Yang, and Manijeh Razeghi "Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054004 (26 January 2018); https://doi.org/10.1117/12.2297475

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