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This paper presents the physical device modeling of a Si/Si1-xGex multi-quantum well (MQW) detector to optimize the Ge content in the Si/Si1-xGex well required to enhance thermal sensitivity for a potential microbolometer application. The modeling approach comprises a self-consistent coupled Poisson-Schroedinger solution in series with the thermionic emission theory at the Si/Si1-xGex heterointerface and quantum confinement within the Si/Si1-xGex MQW. The integrated simulation environment developed in Sentauruas WorkBench (SWB) TCAD is employed to investigate the transfer characteristics of the device consisting three stacks of Si/Si1-xGex wells with an active area of 17μm x 17μm were investigated and compared with experiment data.
Atia Shafique,Shahbaz Abbasi,Omer Ceylan,Canan B. Kaynak,Mehmet Kaynak, andYasar Gurbuz
"Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241A (29 May 2018); https://doi.org/10.1117/12.2305003
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Atia Shafique, Shahbaz Abbasi, Omer Ceylan, Canan B. Kaynak, Mehmet Kaynak, Yasar Gurbuz, "Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity," Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241A (29 May 2018); https://doi.org/10.1117/12.2305003