GaN HEMT power amplifier for radar waveforms

Dawid Kuchta; Wojciech Wojtasiak

doi:10.1117/12.2317908

19 April 2018 GaN HEMT power amplifier for radar waveforms

Dawid Kuchta, Wojciech Wojtasiak

Proceedings Volume 10715, 2017 Radioelectronic Systems Conference; 107150N (2018) https://doi.org/10.1117/12.2317908
Event: Radioelectronics Systems Conference, 2017, Jachranka, Poland

Abstract

The paper presents the amplifier for application in an active electronically scanned array (AESA). For design purposes both time- and frequency domain simulations were carried out. The developed amplifier achieved more than 9W of output power at a maximum efficiency of 57% for 9.5 GHz and small-signal gain |S₂₁|>11dB over 9-10 GHz frequency range. Furthermore, the potential of Polish GaN HEMT technology based on domestic, semi-insulating, bulk GaN substrate fabricated by Ammono.

Citation Download Citation

Dawid Kuchta and Wojciech Wojtasiak "GaN HEMT power amplifier for radar waveforms", Proc. SPIE 10715, 2017 Radioelectronic Systems Conference, 107150N (19 April 2018); https://doi.org/10.1117/12.2317908

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