Paper
19 May 1989 40 dB Overwrite-Modulation Phase-Change Optical Disk Using In-Sb-Te Alloy
Yoshio Sato, Yoshihito Maeda, Hisashi Andoh, Isao Ikuta, Masaichi Nagai, Nobuyoshi Tsuboi, Hiroyuki Minemura, Masaji Ishigaki
Author Affiliations +
Proceedings Volume 1078, Optical Data Storage Topical Meeting; (1989) https://doi.org/10.1117/12.952737
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
Abstract
A single-beam overwrite was achieved by an In-Sb-Te phase-change optical disk. The carrier to noise (C/N) ratio of more than 50 dB and the overwrite modulation of -40 dB were obtained for overwriting frequencies of 2 MHz and 3 MHz using a low power laser diode of 30 The high C/N ratio and the excellent overwrite modulation were due to the large reflectivity difference between the written and erased phases and the use of suitable write/erase power.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshio Sato, Yoshihito Maeda, Hisashi Andoh, Isao Ikuta, Masaichi Nagai, Nobuyoshi Tsuboi, Hiroyuki Minemura, and Masaji Ishigaki "40 dB Overwrite-Modulation Phase-Change Optical Disk Using In-Sb-Te Alloy", Proc. SPIE 1078, Optical Data Storage Topical Meeting, (19 May 1989); https://doi.org/10.1117/12.952737
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KEYWORDS
Modulation

Reflectivity

Phase shift keying

Optical discs

Optical storage

Semiconductor lasers

Crystals

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