Paper
19 July 1989 Electrical Defect Monitoring For Process Control
Charles F. King, G. Peter Gill, Michael J. Satterfield
Author Affiliations +
Abstract
The use of electrical defect monitoring for process control is described. Details are presented of the use of fast cycle time short flow snake lots for metal and poly processes in an advanced CMOS pilot production line. Contributions to defectivity from diffusion, CVD, and etch processes are described briefly. The nature and origin of three different types of photo process defects are discussed together with methods of eliminating these defects; a track develop system gave lower defect density than a batch develop system, and a higher numerical aperture stepper led to the reduction of a micro bridging defect mechanism. An application of snake processing to give improvements in a contrast enhancement layer photo technique showed that contrast enhancement layer strip time was a key factor in improving yields. The need for an integrated photo monitoring system consists of snake patterns and other forms of inspection is discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles F. King, G. Peter Gill, and Michael J. Satterfield "Electrical Defect Monitoring For Process Control", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953082
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Semiconducting wafers

Process control

Inspection

Particles

Optical lithography

Metals

Etching

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