Silicon-based GeSn mid-infrared lasers (Conference Presentation)

Yiyin Zhou; Wei Dou; Perry Grant; Joe Margetis; Wei Du; Seyed A. Ghetmiri; Aboozar Mosleh; John Tolle; Greg Sun; Richard A. Soref; Jifeng Liu; Baohua Li; Mansour Mortazavi; Shui-Qing Yu

doi:10.1117/12.2506913

13 March 2019 Silicon-based GeSn mid-infrared lasers (Conference Presentation)

Yiyin Zhou, Wei Dou, Perry Grant, Joe Margetis, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, John Tolle, Greg Sun, Richard A. Soref, Jifeng Liu, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

Author Affiliations +

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109390R (2019) https://doi.org/10.1117/12.2506913
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Silicon-based optoelectronic devices have long been desired owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the reach of Si technology by expanding its functionalities well beyond electronics. To overcome the intrinsic problem of bandgap indirectness in the group-IV semiconductors such as Si and Ge, a new group-IV based material, GeSn alloy, has attracted increasing interests. The group-IV GeSn alloy has been demonstrated to become direct bandgap material with more than 8% Sn incorporation, which opens a new opportunity towards a Si-based light source with fully complementary metal-oxide-semiconductor (CMOS) compatibility. The GeSn laser contributes strongly to the progress of optoelectronic integration towards next-generation photonic integrated circuit on the Si platform, as it fills the deficiency of the efficient group-IV band-to-band lasers. Moreover, due to the tunable bandgap of GeSn, the lasing operation wavelength covers broad near- and mid-infrared range. Recently, the GeSn optically pumped lasers based on direct bandgap GeSn alloys have been demonstrated. In this work, the following aspects have been investigated: i) the novel growth strategy to obtain high Sn compositions based on spontaneous-relaxation-enhanced (SRE) Sn incorporation and the GeSn virtual substrate (VS) approaches. The maximum Sn composition of 22.3% was achieved; ii) the demonstration of GeSn optically pumped heterostructure lasers. The operation wavelength covers from 2 to 3 µm and the maximum lasing temperature is 265 K; iii) the demonstration of GeSn quantum well laser. The significantly reduced lasing threshold compared to heterostructure laser was achieved.

Conference Presentation

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Yiyin Zhou, Wei Dou, Perry Grant, Joe Margetis, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, John Tolle, Greg Sun, Richard A. Soref, Jifeng Liu, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu "Silicon-based GeSn mid-infrared lasers (Conference Presentation)", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390R (13 March 2019); https://doi.org/10.1117/12.2506913

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KEYWORDS

Silicon

Mid-IR

Semiconductor lasers

Tin

Electronics

Heterojunctions

Laser optics

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