Transparent deep ultraviolet light-emitting diodes with a p-type AlN ohmic contact layer

Jianping Zhang; Ying Gao; Ling Zhou; Young-Un Gil; Kyoung-Min Kim

doi:10.1117/12.2506918

1 March 2019 Transparent deep ultraviolet light-emitting diodes with a p-type AlN ohmic contact layer

Jianping Zhang, Ying Gao, Ling Zhou, Young-Un Gil, Kyoung-Min Kim

Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications; 1094002 (2019) https://doi.org/10.1117/12.2506918
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We report a transparent 269 nm deep ultraviolet (UV) light-emitting diode (LED) with a thin Mg-doped AlN p-type ohmic contact layer. At 20 mA direct current, the forward voltage is 6.2 V and the optical output power is 11.8 mW, translating into wall-plug-efficiency (WPE) and external quantum efficiency (EQE) equal to 9.5% and 12.8%, respectively. The device maintains 70% of its original optical output power for more than 1000 hours (L70≥1000 hrs) at a current density (J) of 88.9 A/cm². Experimental data support that this device will have a significantly increased L70 for J ≤ 30 A/cm². We also demonstrate that for deep UV LEDs the EQE vs current-density (EQE-J) curve can be well fitted by the standard carrier recombination model (ABC model), and internal quantum efficiency (IQE) and light-extraction efficiency (LEE) can thus be extracted. Furthermore, we propose a method for quick assessment of LED’s lifetime, through fitting of EQE-J curves before and after short-term reliability test.

Conference Presentation

Citation Download Citation

Jianping Zhang, Ying Gao, Ling Zhou, Young-Un Gil, and Kyoung-Min Kim "Transparent deep ultraviolet light-emitting diodes with a p-type AlN ohmic contact layer", Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 1094002 (1 March 2019); https://doi.org/10.1117/12.2506918

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