Study on band gap and dispersion model of Al2O3 thin films with different oxygen flow rates by ion beam sputtering

Jiahuan He; Dan Chen; Lishuan Wang; Shida Li; Dandan Liu; Yugang Jiang; Meiping Zhu; Huasong Liu

doi:10.1117/12.2539622

8 July 2019 Study on band gap and dispersion model of Al₂O₃ thin films with different oxygen flow rates by ion beam sputtering

Jiahuan He, Dan Chen, Lishuan Wang, Shida Li, Dandan Liu, Yugang Jiang, Meiping Zhu, Huasong Liu

Author Affiliations +

Proceedings Volume 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019); 1106413 (2019) https://doi.org/10.1117/12.2539622
Event: Pacific Rim Laser Damage 2019 and Thin Film Physics and Applications 2019, 2019, Qingdao, China

Abstract

Six groups of single-layer Alumina (Al₂O₃) thin films with different oxygen flow rate were prepared by ion beam sputtering. The oxygen flow rate changed from 0 sccm to 50 sccm with the interval of 10 sccm. The transmission spectrum, reflection spectrum and ellipsometric reflection spectrum of Al₂O₃ thin films were analyzed by cody-lorentz model inversion calculation. The surface roughness of six groups of samples was measured by white light interferometer. The effects of oxygen flow on band gap, Urbach band-tail absorption, deposition rate, surface roughness, deposition rate of Al₂O₃ thin films were studied. The experimental results showed that oxygen flow directly affects the band gap, Urbach tail absorption, deposition rate, surface roughness and deposition rate of Al₂O₃ thin films.

Citation Download Citation

Jiahuan He, Dan Chen, Lishuan Wang, Shida Li, Dandan Liu, Yugang Jiang, Meiping Zhu, and Huasong Liu "Study on band gap and dispersion model of Al₂O₃ thin films with different oxygen flow rates by ion beam sputtering", Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106413 (8 July 2019); https://doi.org/10.1117/12.2539622

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