Paper
31 December 2019 Electronic and optical properties of Dirac semimetals in InAs/GaInSb superlattice nanostructures
Mikhail Patrashin, Norihiko Sekine, Kouichi Akahane, Akifumi Kasamatsu, Iwao Hosako
Author Affiliations +
Abstract
In this work we discuss technological aspects of creating a linear energy dispersion spectrum of charge carriers in semiconductor materials and report on the experimental realization of the topological Dirac semimetals (DSM) in nanostructurally engineered zero-gap InAs/GaInSb superlattices (SL) [1]. The SL samples are synthesized by molecular beam epitaxy, which provides monolayer accuracy for growing high-quality single-crystals on large area substrates. The prospects for designing the topological insulator (TI) SLs with the same approach and first results of experimental characterization of the TI candidates are also presented.
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Mikhail Patrashin, Norihiko Sekine, Kouichi Akahane, Akifumi Kasamatsu, and Iwao Hosako "Electronic and optical properties of Dirac semimetals in InAs/GaInSb superlattice nanostructures", Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 112010N (31 December 2019); https://doi.org/10.1117/12.2541284
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KEYWORDS
Indium arsenide

Superlattices

Magnetism

Optical properties

Crystals

Nanostructures

Quasiparticles

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