Presentation + Paper
24 February 2020 Tapered amplifiers for high-power MOPA setups between 750 nm and 2000 nm
L. Ogrodowski, P. Friedmann, J. Gilly, M. T. Kelemen
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011E (2020) https://doi.org/10.1117/12.2547334
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Semiconductor laser diodes with a tapered gain region provide a beam quality near to the diffraction limit combined with high output power. They can be configured as lasers with a high-reflectivity coating on the rear facet as well as amplifiers with an antireflection coating on both facets. In amplifier configuration, they can be used in external cavity or Master-Oscillator-Power-Amplifier configuration with the advantage of a narrow linewidth. Today amplifiers are commercially established with an optical output-power of 1-3W in a wide range of applications in quantum optics, metrology or spectroscopy. By extension of the resonator length up to 5mm combined with optimised processing and coating a new class of high-power tapered amplifiers at different wavelengths between 750nm and 1060nm for master-oscillator- power amplifier configurations of 4-5W output power will be presented. In addition, the tapered concept has been successfully transferred to InP and GaSb based material systems to address the eye-safe spectral range between 1500 and 2000nm. Nearly diffraction limited tapered amplifiers and lasers will be demonstrated in the 1W power range for 1530nm, 1550nm and 1930nm.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Ogrodowski, P. Friedmann, J. Gilly, and M. T. Kelemen "Tapered amplifiers for high-power MOPA setups between 750 nm and 2000 nm", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011E (24 February 2020); https://doi.org/10.1117/12.2547334
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KEYWORDS
Amplifiers

Optical amplifiers

Continuous wave operation

Semiconductor lasers

Gallium arsenide

Absorption spectroscopy

Gallium antimonide

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