High-power semiconductor lasers with surface diffraction grating (1050nm)

Sergey O. Slipchenko; Vasily V. Zolotarev; Andrei Yu. Leshko; Aleksandr A. Podoskin; Viktor V. Shamakhov; Vladimir A. Kapitonov; Peter S. Kop’ev; Nikita A. Pikhtin

doi:10.1117/12.2546174

24 February 2020 High-power semiconductor lasers with surface diffraction grating (1050nm)

Sergey O. Slipchenko, Vasily V. Zolotarev, Andrei Yu. Leshko, Aleksandr A. Podoskin, Viktor V. Shamakhov, Vladimir A. Kapitonov, Peter S. Kop’ev, Nikita A. Pikhtin

Author Affiliations +

Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011U (2020) https://doi.org/10.1117/12.2546174
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Studies of multimode and single-mode semiconductor lasers with a surface distributed Bragg reflector (S-DBR) were carried out. S-DBR with a period of 2 μm was formed in the upper cladding layer by contact photolithography. The spectrum width for all laser designs did not exceed 0.3 nm both at continuous wave (CW) and pulse of 100 ns pump. Temperature stability of emission wavelength increase from a value of 0.35 nm/°С for a Fabry-Perot laser to a value of 0.075 nm/°С for a S-DBR laser was demonstrated. The relatively low output optical power of high-order S-DBR lasers is associated with the presence of diffraction modes emitting from the surface of the DBR.

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Sergey O. Slipchenko, Vasily V. Zolotarev, Andrei Yu. Leshko, Aleksandr A. Podoskin, Viktor V. Shamakhov, Vladimir A. Kapitonov, Peter S. Kop’ev, and Nikita A. Pikhtin "High-power semiconductor lasers with surface diffraction grating (1050nm)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011U (24 February 2020); https://doi.org/10.1117/12.2546174

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