Paper
23 March 2020 High-NA EUV lithography optics becomes reality
Author Affiliations +
Abstract
For each lithography scanner the optics is a key component. While the NXE:3400 with ZEISS Starlith®3400 optics at Numerical Aperture of 0.33 is entering high-volume manufacturing in customer factories, we are developing high NA optics with a Numerical Aperture of 0.55. This optics consists of a highly flexible illumination system and a projection optics enabling single-exposure sub 8nm half-pitch resolution. In this paper, we give an overview of the progress of ZEISS High-NA EUV program where production of first mirrors and frames has already been started.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lars Wischmeier, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Jan van Schoot, Joerg Mallmann, Joost de Pee, and Judon Stoeldraijer "High-NA EUV lithography optics becomes reality", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132308 (23 March 2020); https://doi.org/10.1117/12.2543308
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Cited by 3 scholarly publications.
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KEYWORDS
Mirrors

Metrology

EUV optics

Projection systems

Optics manufacturing

Lithography

Extreme ultraviolet

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