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20 March 2020 Improved device overlay by litho aberration tracking with novel target design for DRAM
Xiaolei Liu, Eitan Hajaj, Alon Volfman, Hedvi Spielberg, Yoav Grauer, Raviv Yohanan, Xindong Gao
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Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113252R (2020) https://doi.org/10.1117/12.2551990
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States
Abstract
For today’s advanced processes, in order to achieve higher optical lithography resolution, some of the layers require extreme dipole illumination conditions. One example is the modern DRAM process, where numerous critical layers are patterned with extreme dipole scanner illumination. Conventional (both imaging-based and diffraction-based) overlay marks on such layers typically use horizontal or vertical lines that suffer from insufficient accuracy in overlay device tracking. The new Diagonal AIM (DAIM™) overlay mark mimics the actual device through the usage of tilted structures. Significant improvement in device overlay tracking was demonstrated using the DAIM overlay mark.
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Xiaolei Liu, Eitan Hajaj, Alon Volfman, Hedvi Spielberg, Yoav Grauer, Raviv Yohanan, and Xindong Gao "Improved device overlay by litho aberration tracking with novel target design for DRAM", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113252R (20 March 2020); https://doi.org/10.1117/12.2551990
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KEYWORDS
Overlay metrology
Lithographic illumination
Optical proximity correction
Diffraction gratings
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