Presentation + Paper
13 April 2020 Investigation of GeSn/SiGeSn nanostructured layer for sensors in mid-infrared application
Author Affiliations +
Abstract
The Ge1-xSnx material system has been introduced as a potential solution for low-cost high-performance photodetector for short-wave infrared towards mid-infrared detections. An investigation of GeSn/SiGeSn nanostructure layer is reported for sensors for near and mid-infrared applications. Physics-based models will be developed for SiGeSn/GeSn based nanostructured sensors considering the carrier dynamics at hetero-interface, misfit dislocation and strain at the interface. We analyze the effect of biaxial strain on SiGeSn/GeSn alloys and determine the range of wavelength for the possible application in near and midinfrared range.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ravi Ranjan, Prakash Pareek, Saurabh K. Pandey, Sanjay Kumar, and Jitendra K. Mishra "Investigation of GeSn/SiGeSn nanostructured layer for sensors in mid-infrared application", Proc. SPIE 11345, Nanophotonics VIII, 113452K (13 April 2020); https://doi.org/10.1117/12.2555931
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KEYWORDS
Germanium

Tin

Mid-IR

Sensors

Nanostructuring

Silicon

Communication engineering

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