Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures

Saranya Reddy Shriram; Ravindra Kumar; Sanowar Alam Gazi; Jhuma Saha; Debiprasad Panda; Arjun Mandal; Subhananda Chakrabarti

doi:10.1117/12.2555864

1 April 2020 Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures

Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Jhuma Saha, Debiprasad Panda, Arjun Mandal, Subhananda Chakrabarti

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Proceedings Volume 11345, Nanophotonics VIII; 113452W (2020) https://doi.org/10.1117/12.2555864
Event: SPIE Photonics Europe, 2020, Online Only

Abstract

In this study, we have discussed the effect of strain distribution and optical properties on In_0.14Ga_0.86As matrix thickness variation (t_mat) in self-assembled InAs quantum dot (QD) heterostructure using temperature and power-dependent photoluminescence (PL) measurements. The calculated ground-state transition energies are 1.12, 1.14 and 1.09 eV for t_mat of 2, 4 and 6 ML (monolayer) In_0.14Ga_0.86As matrix thickness respectively. We also discern that the full-width at half-maximum (FWHM) broadens gradually as temperatures increases due to electron-phonon scattering. The calculated activation energy (E_a) values are 231, 302 and 98 meV for increasing t_mat. The partial strain relief due to varying In_0.14Ga_0.86As layer thickness occurs due to QD size tunability by preventing Indium (In) segregation effect, that sets the possibility to understand about InAs inter-band and intersubband transitions of PL emission. This has been validated with HRXRD results where strain decreases linearly with increasing t_mat. Here In_0.14Ga_0.86As layer acts as a strain-reducing layer (SRL) in QD heterostructure as well. Thus helps in reducing the hydrostatic strain (∊_hyd) of InAs QDs, while the lower InGaAs layer increases the QD density, leading to a remarkable rise in PL intensity due to state filling of carriers. The effect of strain distribution for varying t_mat in the heterostructure was also studied using nextnano++ simulations. The relative percentage change in hydrostatic (biaxial) strain was calculated to be 5.5% (8%) respectively. Thus, the results so obtained can help in tuning matrix thickness on the PL emission properties of QDs and therefore in the realization of several optoelectronic devices.

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Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Jhuma Saha, Debiprasad Panda, Arjun Mandal, and Subhananda Chakrabarti "Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures", Proc. SPIE 11345, Nanophotonics VIII, 113452W (1 April 2020); https://doi.org/10.1117/12.2555864

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