Middle wavelength infrared graphene photodetectors with low dark-current and high responsivity

Shoichiro Fukushima; Masaaki Shimatani; Satoshi Okuda; Shinpei Ogawa; Yasushi Kanai; Takao Ono; Koichi Inoue; Kazuhiko Matsumoto

doi:10.1117/12.2558381

23 April 2020 Middle wavelength infrared graphene photodetectors with low dark-current and high responsivity

Shoichiro Fukushima, Masaaki Shimatani, Satoshi Okuda, Shinpei Ogawa, Yasushi Kanai, Takao Ono, Koichi Inoue, Kazuhiko Matsumoto

Author Affiliations +

Proceedings Volume 11407, Infrared Technology and Applications XLVI; 1140718 (2020) https://doi.org/10.1117/12.2558381
Event: SPIE Defense + Commercial Sensing, 2020, Online Only

Abstract

Graphene infrared (IR) photodetectors are promising devices that take advantage of the unique optoelectronic properties of graphene, such as broadband light absorption, rapid response, and high chemical stability. Despite its advantages, graphene has a low absorbance of 2.3%, which limits its photoresponsivity. We have previously reported the responsivity enhancement of graphene middle wavelength IR (MWIR) photodetectors using the photogating effect. The photogating effect is induced by photosensitizers located around the graphene channel that generate a large electrical change. The MWIR photoresponse with the photogating effect was enhanced by 100-fold relative to conventional graphene field-effect transistors (FETs). Although our graphene FETs using photogating exhibited ultrahigh responsivity, the dark current was extremely high, as in the case of conventional graphene FETs, because the normally-OFF operation cannot be realized in graphene. Therefore, reducing the high dark current is essential for applying graphene photodetectors to IR applications. We demonstrate dark current reduction and high responsivity MWIR light detection in graphene MWIR photodetectors. The devices consist of graphene FETs with a carrier injection region. The dark current is reduced by applying a bias voltage. The photocarriers injected into the graphene are amplified by the photogating effect induced in the graphene/insulator region. The dark current of the devices was significantly suppressed compared with that of conventional graphene FETs. The photoresponse characteristics were investigated for devices of different structure sizes. The results obtained in this study will contribute to the development of high-performance graphene-based IR image sensors.

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Shoichiro Fukushima, Masaaki Shimatani, Satoshi Okuda, Shinpei Ogawa, Yasushi Kanai, Takao Ono, Koichi Inoue, and Kazuhiko Matsumoto "Middle wavelength infrared graphene photodetectors with low dark-current and high responsivity", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 1140718 (23 April 2020); https://doi.org/10.1117/12.2558381

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KEYWORDS

Graphene

Photodetectors

Field effect transistors

Mid-IR

Infrared imaging

Image sensors

Infrared sensors

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