Thomas Guillet,1,2,3 Carlo Zucchetti,4 Adele Marchionni,4 Quentin Barbedienne,5,6,7 Ali Hallalhttps://orcid.org/0000-0002-2284-9027,1,2,3 Alain Marty,1,2,3 Céline Vergnaud,1,2,3 Giovanni Isella,4 Henri Jaffrès,5,6,7 Nicolas Reyren,5,6,7 Jean-Marie George,5,6,7 Mair Chshiev,1,2,3 Marco Finazzi,4 Franco Ciccacci,4 Paolo Biagioni,4 Aurélien Masseboeuf,1,2,3 Hanako Okuno,2,8 Federico Bottegoni,4 Albert Fert,5,6,7 Matthieu Jamet1,2,3
1CEA-Grenoble, SPINTEC (France) 2Univ. Grenoble Alpes (France) 3Grenoble INP, CNRS (France) 4Politecnico di Milano (Italy) 5Unité Mixte de Physique CNRS/Thales (France) 6Univ. Paris-Sud (France) 7Univ. Paris-Saclay (France) 8CEA-DRF (France)
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Germanium is a very good candidate to host a versatile spintronics platform thanks to its unique spin and optical properties. Recently we focused on two approaches in order to tune the spin-orbit interaction (SOI) in this Ge-based platform. The first one relies on growing high quality epitaxial topological insulators (TIs) on a Ge (111) substrate, we developed an original method to probe the spin-to-charge conversion at the TI/Ge(111) interface by taking advantage of the Ge optical properties. The latter approach is to exploit the intrinsic SOI of Ge (111). By investigating the electrical properties of a thin Ge(111), we found a large unidirectional Rashba magnetoresistance, which we ascribe to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field applied in the spin-splitted subsurface states of Ge (111). Both studies open a door towards spin manipulation with electric fields in an all-semiconductor technology platform.
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Thomas Guillet, Carlo Zucchetti, Adele Marchionni, Quentin Barbedienne, Ali Hallal, Alain Marty, Céline Vergnaud, Giovanni Isella, Henri Jaffrès, Nicolas Reyren, Jean-Marie George, Mair Chshiev, Marco Finazzi, Franco Ciccacci, Paolo Biagioni, Aurélien Masseboeuf, Hanako Okuno, Federico Bottegoni, Albert Fert, Matthieu Jamet, "Germanium: a semiconducting platform for spin-orbitronics," Proc. SPIE 11470, Spintronics XIII, 114702Q (20 August 2020); https://doi.org/10.1117/12.2567222