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InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and highresponsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-μm-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin, andErping Li
"Back-illuminated modified uni-traveling-carrier photo-diodes (MUTC-PDs) with 3-dB bandwidth over 40 GHz", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 1161731 (4 December 2020); https://doi.org/10.1117/12.2585422
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Zheng Zhen, Ran Hao, Dong Xing, Zhihong Feng, Shangzhong Jin, Erping Li, "Back-illuminated modified uni-traveling-carrier photo-diodes (MUTC-PDs) with 3-dB bandwidth over 40 GHz," Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 1161731 (4 December 2020); https://doi.org/10.1117/12.2585422