Paper
4 December 2020 Back-illuminated modified uni-traveling-carrier photo-diodes (MUTC-PDs) with 3-dB bandwidth over 40 GHz
Author Affiliations +
Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 1161731 (2020) https://doi.org/10.1117/12.2585422
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China
Abstract
InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and highresponsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-μm-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zheng Zhen, Ran Hao, Dong Xing, Zhihong Feng, Shangzhong Jin, and Erping Li "Back-illuminated modified uni-traveling-carrier photo-diodes (MUTC-PDs) with 3-dB bandwidth over 40 GHz", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 1161731 (4 December 2020); https://doi.org/10.1117/12.2585422
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