Low-noise infrared digital-alloy avalanche photodiodes

Joe C. Campbell; Seth R. Bank; Andrew H. Jones; Stephen D. March

doi:10.1117/12.2585636

5 March 2021 Low-noise infrared digital-alloy avalanche photodiodes

Joe C. Campbell, Seth R. Bank, Andrew H. Jones, Stephen D. March

Proceedings Volume 11680, Physics and Simulation of Optoelectronic Devices XXIX; 116800Q (2021) https://doi.org/10.1117/12.2585636
Event: SPIE OPTO, 2021, Online Only

Abstract

Avalanche photodiodes (APDs) can provide high receiver sensitivity owing to their internal gain, however, the impact ionization gain mechanism is also a source of noise. Recently, AlxIn1-xAsySb1-y grown as a digital alloy has been used to fabricate APDs with excess noise as low as Si (k ~ 0.01). Operation of these APDs at telecommunication wavelengths (1300 nm to 1550 nm) or 2 µm has been achieved. This paper also discusses staircase APDs, which utilize compositional grading to mimic the dynodes of a photomultiplier tube, with a gain of 2x arising at each step providing extremely low noise avalanche gain.

Conference Presentation

Citation Download Citation

Joe C. Campbell, Seth R. Bank, Andrew H. Jones, and Stephen D. March "Low-noise infrared digital-alloy avalanche photodiodes", Proc. SPIE 11680, Physics and Simulation of Optoelectronic Devices XXIX, 116800Q (5 March 2021); https://doi.org/10.1117/12.2585636

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